Accession Number:

ADP007673

Title:

Competition Between Tunneling and Exciton Formation for Photoexcited Carriers in Asymmetric Double Wells,

Personal Author(s):

Corporate Author:

MAX-PLANCK-INST FUER FESTKOERPERFORS- CHUNG STUTTGART (GERMANY F R)

Report Date:

1992-05-22

Abstract:

The formation of excitons from photoexcited free carriers in a GaAs asymmetric double quantum well tunneling structure is shown to occur by a bimolecular process. Using the non-linear luminescence cross-correlation technique, a bi-molecular formation coefficient of 6xlO-12cm2ps is determined. The electron and hole tunneling times are also simultaneously obtained.

Supplementary Note:

This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p223-228.

Pages:

0006

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File Size:

0.00MB

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