Picosecond-resolution measurements of the current transients produced when energetic ions alpha particles interact with high-speed digital GaAs MESFETs are presented. Measurements as a function of device bias and temperature reveal the presence of several different contributions to the charge-collection transients, ranging in time scale from picoseconds to microseconds. The effects of permanent radiation damage are found to degrade device performance to the extent that reliable measurement of the ion-induced transients is difficult and, in many cases, impossible. The use of above-bandgap picosecond laser excitation is revealed to be a viable alternative to the use of heavy ions for characterization of the charge-collection dynamics in semiconductor devices.
This artcile is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p119-125.