Accession Number:

ADP007647

Title:

Ultrafast Graded Double-Heterostructure p-i-n Photodiode,

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

1992-05-22

Abstract:

A 5 micro x 5 micron double heterostructure InGaAsInP pin photodiode is reported with a measured response of 5 ps and a deconvolved device impulse response of 3.8 ps. The double heterostructure employed reduces carrier diffusion and the graded heterobarriers play a key role in optimizing the device response speed by minimizing charge storage and device series resistance.

Supplementary Note:

This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p92-96.

Pages:

0005

File Size:

0.00MB

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