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Accession Number:
ADP007594
Title:
Nonlinearity Enhancement in a Four Layer GaAs/GaAlAs Waveguide,
Corporate Author:
SOUTH CHINA NORMAL UNIV GUANGZHOU
Report Date:
1992-05-22
Abstract:
The photorefractive effect in semiconductor materials is attractive for processing low intensity near-infrared optical signals which are important for optical communication and optical computing. Photoinduced large nonlinearity in GaAs materials has been extensively studied in bulk material. A few is with optical waveguide of GaAs materials though the signal amplification in GaAs waveguide via two wavemixing has been proposed.
Supplementary Note:
This article is from 'OSA Proceedings of the Topical Meeting on Nonlinear Guided-Wave Phenomena Held in 2-4 September 1991. Cambridge, England United Kingdom. Volume 15', AD-A253 471, p262-265.
Pages:
0004
File Size:
0.00MB
