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Accession Number:
ADP007581
Title:
Nonlinear Refraction and Absorption of an InGaAs Single Quantum Well in an InGaAsP Waveguide,
Corporate Author:
HERIOT-WATT UNIV EDINBURGH (SCOTLAND) DEPT OF PHYSICS
Report Date:
1992-05-22
Abstract:
Semiconductor quantum-well structures can provide enhanced nonlinear effects compared to those observed in bulk material. The largest irradiance-induced refractive changes occur at wavelengths nearly resonant with the band edge or exciton absorption. If such a nonlinearity is to be effectively exploited in a waveguide configuration, the absorption due to the active quantum-well layers must be diluted to ensure sufficient transmission. Although this produces, all else being equal, a proportional drop in the effective nonlinearity n sub 2, it does permit operation at, or near to, the optimum wavelength where the figure-of-merit n sub 2Alpha is maximized.
Supplementary Note:
This article is from 'OSA Proceedings of the Topical Meeting on Nonlinear Guided-Wave Phenomena Held in 2-4 September 1991. Cambridge, England United Kingdom. Volume 15', AD-A253 471, p204-207.
Pages:
0004
File Size:
0.00MB
