Accession Number:

ADP007423

Title:

Photonic Switching Device by Integration of Heterojunction Phototransistor and Laser Diode,

Corporate Author:

KYOTO UNIV (JAPAN)

Report Date:

1992-05-22

Abstract:

High gain and very sensitive photonic switching device is developed by integrating directly and vertically a hetero-junction phototransistor and a laser diode. The device switches on with a very low input power of -10nW and emits output power of -4mW under continuous wave condition. The minimum switching energy is estimated to be as low as 8OfJ.

Supplementary Note:

This article is from 'OSA Proceedings of the International Topical Meeting on Photonic Switching Held in Salt Lake City, Utah on 6-8 March 1992. Volume 8,' AD-A253 026, p264 thru p267.

Pages:

0004

Identifiers:

Communities Of Interest:

File Size:

0.00MB

Full text not available:

Request assistance