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Accession Number:
ADP007228
Title:
Soft-X-Ray Reduction Lithography Using a Reflection Mask,
Corporate Author:
NIPPON TELEGRAPH AND TELEPHONE CORP ATSUGI LSI LABS
Report Date:
1992-05-22
Abstract:
A soft-x-ray reduction lithography using a multilayer reflection mask has been developed. To obtain a high throughput and a large exposure area, a reduction system consisting of two-mirror optics and a reflection mask with a scanning mechanism is adopted as a first generation system. A full 4-inch wafer reflection mask with high contract and an uniform quality throughout has been fabricated using a new process. MoB4C multilayer is used to shorten the exposure wavelength and to refine interfaces of multilayer and to obtain a fine pattern. And fine patterns less than 0.2 um at a demagnification of 18 have been obtained with a reflection mask and MoB4C multilayer optics in the area of 0.8 mm x0.15 mm.
Supplementary Note:
This article is from 'OSA Proceedings of the Topical Meeting on Soft-X-Ray Projection Lithography Held in Monterey, California on 10-12 April 1991. Volume 12', AD-A252 998, p11-15.
Pages:
0005
File Size:
0.00MB
