Accession Number:

ADP002214

Title:

Usage of the SYSCAP II Circuit Analysis Program to Determine Semiconductor Failure Threshold Levels caused by Lightning/EMP Transients,

Personal Author(s):

Corporate Author:

ROCKWELL INTERNATIONAL ANAHEIM CA AUTONETICS STRATEGIC SYSTEMS DIV

Report Date:

1983-01-01

Abstract:

This paper describes an improved technique for calculating semiconductor junction heating resulting from arbitrary time-varying source terms. A FORTRAN subroutine is developed which permits solution of the convolution integral in the SYSCAP circuit analysis program which will simulate the thermal transient for each semiconductor of interest in a circuit subject to lightningEMP disturbances. An example circuit is used to demonstrate the techniques the results compare favorably with laboratory test data. Author

Supplementary Note:

This article is from 'International Aerospace and Ground Conference on Lightning and Static Electricity (8th): 'Lightning Technology Roundup,' held at Fort Worth, Texas on 21-23 June 1983,' AD-A135 100, p68-1 thru 68-6.

Pages:

0006

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File Size:

0.00MB

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