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Usage of the SYSCAP II Circuit Analysis Program to Determine Semiconductor Failure Threshold Levels caused by Lightning/EMP Transients,
ROCKWELL INTERNATIONAL ANAHEIM CA AUTONETICS STRATEGIC SYSTEMS DIV
This paper describes an improved technique for calculating semiconductor junction heating resulting from arbitrary time-varying source terms. A FORTRAN subroutine is developed which permits solution of the convolution integral in the SYSCAP circuit analysis program which will simulate the thermal transient for each semiconductor of interest in a circuit subject to lightningEMP disturbances. An example circuit is used to demonstrate the techniques the results compare favorably with laboratory test data. Author
This article is from 'International Aerospace and Ground Conference on Lightning and Static Electricity (8th): 'Lightning Technology Roundup,' held at Fort Worth, Texas on 21-23 June 1983,' AD-A135 100, p68-1 thru 68-6.