Phase I demonstrated strong room-temperature 1.54 micrometers luminescence from visible light-emitting porous Si doped with erbium. Er was implanted with a dose of 10exp 15sq cm at 190 keV into porous Si, bulk Si, GeSi, quartz, and sapphire. The highest emission intensity was observed for porous Si samples which were annealed at 650 deg C and had a peak concentration of 1.5 x 10exp 20 Ersq cm. However, no IR emission was observed from Er in bulk Si, GeSi, quartz, and sapphire. Our results show that the high PL efficiency in Er-implanted porous Si originates from Er confined in 5nm- diameter Si nanostructures. In these samples, only an insignificant decrease in PL intensity was observed from 77 to 300K. In addition, Phase I work clearly indicates that photoluminescence PL intensity is almost comparable to In0.53 Ga0.47As material, which is used for commercial infrared IR light-emitting diodes LEDs. These results suggest that Erporous-Si electroluminescent devices with practical quantum efficiency at 300K are feasible. Porous Si, Visible light emission, Er Implantation, Infrared emission, Nanostructures photoluminescence, Electroluminescence, Room temperature, Fiber optics.