DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADA278416
Title:
Electrical Characteristics of GaAs MESFET Fabrication by Ion Implantation of Si or Se
Corporate Author:
STANFORD UNIV CA DEPT OF ELECTRICAL ENGINEERING
Report Date:
1993-10-04
Abstract:
Since its synthesis in the 1920s by Goldschmidt, Gallium Arsenide has received much attention in the last few decades. In the mid-1980s, GaAs technology finally matured into the age of production. We saw a boom of companies dedicated to the growth of GaAs materials and the fabrication of GaAs devices and integrated circuits. Although GaAs is no longer being considered a general purpose material like silicon, it is now well established in several niche markets, such as Direct Broadcast Satellite, Microwave Monolithic Integrated Circuits and Optoelectronics.
Descriptive Note:
Final rept. 5 Jul 1989-4 Oct 1993
Pages:
0102
Distribution Statement:
Approved for public release; distribution is unlimited.
Contract Number:
F49620-89-C-0094
Contract Number 2:
ARPA ORDER-6860
File Size:
2.94MB
