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Accession Number:
ADA278380
Title:
Dynamics of Supermatrix Semiconductor Growth
Corporate Author:
ELECTRONIC MATERIALS ENGINEERING CAMARILLO CA
Report Date:
1993-12-24
Abstract:
Electronic Materials Engineering and AFOSR have demonstrated a new semiconductor materials technology for electronic and optoelectronic device applications the Supermatrix Semiconductor SMS. SMS makes possible the 3-dimensional superlattice and a new method for engineering the properties of semiconductor materials through the synergy of 3-dimensional microstructural ordering. A CrGaAs SMS has been produced in Ingot form 2 in. long and 1 in. diameter exhibiting a periodic rod-matrix microstructure over wafer-scale distances. Electronic, optical, and structural properties were characterized by PPL, SIMS, RBS, Auger, and x-ray diffraction and correlated to conditions of solidification. It was demonstrated that the cubic degeneracy of GaAs In the CrGaAs matrix is lifted as a result of anisotropic stress and leads to birefringence. Advances in practical processing of SMS materials, Including polishing, have also been achieved to support future device development activities. Supermatrix semiconductor.
Descriptive Note:
Final rept. 25 Sep 1990-24 Dec 1993
Pages:
0034
Distribution Statement:
Approved for public release; distribution is unlimited.
Contract Number:
F49620-90-C-0087
File Size:
0.94MB
