The effect of germanium on the hot electron current of metal-oxide- semiconductor devices has been studied by avalanche electron injection from the silicon to silicon dioxide. Different doses of germanium ranging from 10exp 12 to 10exp 15 atomssq cm are implanted into Si-SiO2 interface. The lucky hot electron population is suppressed by germanium implantation. We have used the charge-voltage technique to measure the interface state density. The interface state density increase caused by Ge implantation is negligible if the dose is lower than 10exp 14 Gesq cm. We have also used different implantation energies to locate the Ge peak at different locations in the Si. We found that when the peak is at Si-SiO2 interface, the hot electron population is the lowest. Our results show that Ge implantation is a promising method to solve the hot carrier problem that has become important in submicrometer devices.