Data is presented from recent measurements of two SiAs impurity band conduction multiplexed arrays. The devices were produced by different manufacturers. The devices were measured at a temperature of 12 K, and at a background of 1.5x10 to the 12th power Photonssec. sq cm. Both devices show high responsivity and excellent uniformity. The development of impurity band conduction detectors offers the opportunity for high responsivity, uniform, multiplexed arrays for imaging applications. This paper presents data from recent measurements on two SiAs impurity band conduction multiplexed arrays. The arrays were manufactured by Hughes Aircraft Company and Rockwell International. Both arrays were operated at a background photon flux density of 1.5x10 to the 12th power Photonssec. sq cm. and at a temperature of 12 K. The spectral response curves of the two devices are presented. Both devices exhibit a spectral peak near 24 micrometers. Note the extended long wavelength response of these two detectors. This long wavelength response is bias voltage dependent, the response extending the longer wavelengths at higher bias voltages. These spectral data were obtained at a bias of 1.5 volts.