Accession Number:

ADA191619

Title:

Program Plan and Fabrication Specification for the 'Supply of Experimental RADFET (Radiation Sensitive Field Effect Transistor) Dosimeters.'

Personal Author(s):

Corporate Author:

RADIATION EXPERIMENTS AND MONITORS OXFORD (UNITED KINGDOM)

Report Date:

1987-07-27

Abstract:

The first periodic report is a technical planning document setting out test procedures plus a fabrication specification for p-channel Metal - Oxide - Silicon dosimeters, of an experimental type known as RADFETs. Keywords Metal oxide semiconductors Field effect transistors Radiation sensitivity Great Britain.

Descriptive Note:

Periodic rept. no. 1, Jun-Jul 87,

Pages:

0012

Communities Of Interest:

Modernization Areas:

Contract Number:

DAJA45-87-C-0029

File Size:

0.57MB