CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL ENGINEERING AND COMPUTE R SCIENCES
This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the computer aided design CAD of the monolithic microwave and millimeter wave integrated circuits MIMIC. In this reporting period, we have derived a new model for the high electron mobility transistor HEMT based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAsGaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mSmm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAsGaAs HEMTs have also been obtained. In addition, two-dimensional models of the submicron MESFETs, HEMTs and HBTs are currently being developed for the CRAY X-MP48 supercomputer. Preliminary results obtained are also presented in this report.