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Accession Number:
ADA191547
Title:
An Investigation of II-VI Superlattice Deposition by Laser Photochemical Techniques.
Corporate Author:
JET PROPULSION LAB PASADENA CA
Report Date:
1988-01-01
Abstract:
The objectives of this research program are to develop metalorganic chemical vapor deposition MOCVD techniques for Manganese-bearing II-VI ternary compounds epitaxially grown on Gallium Arsenide substrates, and to explore the usefulness of UV laser assist for deposition for superlattice structures of wider bandgap II-VI binary compounds. For the first time, high quality single-crystal 111 Cd1-xMnxTe was grown by conventional MOCVD on 100 GaAs wafers with high resolution cross-selectional transmission electron microscopy was used for structural characterization, showing atomically abrupt interfaces, but different microstructures within the epi-film depending on growth temperature. UV adsorption spectra of a number of metalalkyl sources for Cadmium, Zinc, Selenium, and Tellurium were measured and optical adsorption cross sections calculated. Preliminary depositions of Cadmium Telluride and Zinc telluride films on glass substrates were mase at 200 C with UV excitation provided by an excimer gas laser operating at 193 nm and by using a parallel beam geometry. Some optical and X-ray diffraction data are presented as well as a description of the low pressure laser photochemical deposition system. Keywords UV Photolysis, Superlattices, Thin films, Epitaxy, II-VI Semiconductors.
Descriptive Note:
Annual rept. 26 Nov 86-24 Nov 87,
Pages:
0034
Contract Number:
AFOSR-ISSA-87-0032
File Size:
1.69MB
