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Accession Number:
ADA191118
Title:
Microwave Semiconductor Research-Materials, Devices and Circuits.
Corporate Author:
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
Report Date:
1987-10-01
Abstract:
This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy MBE and organometallic vapor phase epitaxy OMVPE are used for growth.
Descriptive Note:
Final rept. 1 May 84-30 Apr 87,
Pages:
0052
Contract Number:
F49620-84-C-0060
File Size:
3.05MB
