DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADA076237
Title:
High-Energy Ion Implantation for Multigigabit-Rate GaAs Integrated Circuit.
Corporate Author:
RCA LABS PRINCETON NJ
Report Date:
1979-08-01
Abstract:
The program objectives are study of high-energy about 1 MeV ion implantation of donors into GaAs for multigigabit-rate integrated-circuit development and annealing of implanted GaAs using high-power lasers to remove lattice damage and activate implanted donors. Results obtained are We have investigated implantation of 28Si into semi-insulating GaAs with implant energies ranging from 40 keV to 1.2 MeV we have analyzed the profiles and range statistics of 28Si-implanted GaAs with energies of up to 1.2 MeV using Secondary Ion-Mass Spectroscopy SIMS we have investigated laser-annealing of high-dose Si-implanted GaAs using both a high-power Ndglass laser and a ruby laser optical absorption in Si-implanted GaAs wafers irradiated with high-power Ndglass laser pulses has been studied impurity distribution in as-implanted, thermally annealed, and laser-annealed samples has been investigated by SIMS and investigation of 28Si implantations in GaAs at the low-implant energy 300 keV shows that the electron concentration attained has an upper limit at the high-dose region and a lower limit at the low-dose region following thermal annealing.
Descriptive Note:
Annual rept. 15 May 78-14 May 79,
Pages:
0079
Contract Number:
N00014-78-C-0367
File Size:
26.97MB
