GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY
The objective of this research is to investigate the feasibility of new storage techniques for large archival memories using ion and electron beam with semiconductor targets. The goal is the development of an archival memory capable of storing 10 to the 14th to 15th power bits with rapid access to the stored information. During this reporting period, effort included experimental work and theoretical studies on planar diode structures memory target substrate, ion implantation of inert ions to form sub-micron bit sites, theoretical studies of bit packing density, experimental alloy junction writing using laser and electron beams, and completion of both electron and ion write optics studies. Experimental implants were made and bit sites of 0.1 or - 0.05 microns were achieved. Bit packing studies indicate that bits spaced 0.1 microns apart may be possible.