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Accession Number:
ADA063956
Title:
Noncoplanar High Power FET.
Corporate Author:
VARIAN ASSOCIATES INC PALO ALTO CA
Report Date:
1978-10-27
Abstract:
The use of low-doped tubs under the source and drain have significantly reduced the parasitic capacitances of a common-gate noncoplanar power FET structure. Submicron gate lengths were easily achieved with an etch and growth technique. Author
Descriptive Note:
Annual rept. no. 2, Jan-Dec 1976,
Pages:
0050
Contract Number:
N00014-75-C-0303
File Size:
17.59MB
