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Accession Number:
ADA063332
Title:
Dielectric Layers on III-V Semiconductors.
Corporate Author:
COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
Report Date:
1978-07-01
Abstract:
Studies on the electronic profile of InAs epilayers have been completed. The use of ion beam sputtered silicon nitride as an encapsulant has been reported and the project extended to aluminum nitride. A new sputter system has been installed, and details of ion beam sputter damage are being examined. Author
Descriptive Note:
Annual rept. 15 Jun 77-14 Jun 78,
Pages:
0014
Contract Number:
N00014-76-C-0976
File Size:
5.61MB
