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Accession Number:
ADA056862
Title:
Encapsulation and Annealing of Sulfur and Selenium Implanted Gallium Arsenide
Corporate Author:
SRI INTERNATIONAL MENLO PARK CA
Report Date:
1978-03-24
Abstract:
This report describes progress on a program to investigate encapsulation films used as annealing caps on ion implanted GaAs samples and to develop alternative procedures and techniques for improving the efficiency of n- type ion implants. The major high impact technological achievement of this research program has been the development and perfection of a chemically inert double layered encapsulation system which improves the electrical performance of ion implanted layers as well as allowing reliable annealing at temperatures up to 1100 C.
Descriptive Note:
Final rept. 1 May 1975-10 Sep 1977
Pages:
0097
Distribution Statement:
Approved for public release; distribution is unlimited.
Contract Number:
F33615-75-C-1084
File Size:
3.49MB
