Accession Number:

ADA056446

Title:

High-Speed Electron-Beam Lithographic Resists for Micron and Submicron Integrated Circuits,

Personal Author(s):

Corporate Author:

ARMY ELECTRONICS TECHNOLOGY AND DEVICES LAB FORT MONMOUTH N J

Report Date:

1978-06-01

Abstract:

Next-generation RADAR and ELINT systems are planned to provide the field commander with comprehensive intelligence on the disposition of enemy weapons and electronics equipment. Ultra-compact signal processors with unprecedented capabilities are the heart of these systems. Fabrication of the required high-density integrated circuits ICs, with elements in the micron to submicron range, is beyond the resolution limit of state-of-the-art optical photolithography. Electrons with 10-20 keV energies can be accurately focused to beam diameters much less than a micron. Electron-beam lithography EBL meets the projected resolution requirements, and is expected to be a key technology for the production of sophisticated new digital communications systems for the Army.

Pages:

0011

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Subject Categories:

Communities Of Interest:

Modernization Areas:

File Size:

4.79MB

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