ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY/DEVICES LAB
It is shown that Auger electron spectroscopy can reveal the absolute energy level, with respect to the valence band edge, of Si dangling bond electrons in silicon dioxide. A theoretical model is proposed, and the Auger Electron distribution NE for the LVV transition band is calculated for a stoichiometric silicon dioxide surface, and for a silicon oxide surface with unpaired, dangling bond electrons. The latter is characterized by an additional LVD transition band, where D is the energy level of the unpaired electron. The theoretical NE curves are compared with experimental NE curves for a pristine, and for an electron radiation damaged quartz surface. Good agreement with the theoretical model is obtained, if D is assumed to lie 7.2 eV above the valence band edge. Author
Presented at the International Topical Conference on the Physics of SiO sub 2 and Its Interfaces, York Heights, NY 22-24 Mar 78.