Accession Number:

ADA056276

Title:

Second Breakdown Susceptibility of Silicon-on-Sapphire Diodes.

Corporate Author:

AUBURN UNIV ALA DEPT OF PHYSICS

Report Date:

1978-06-08

Abstract:

The present report is the first portion of a second breakdown study of a specially designed array of silicon-on-sapphire diodes. The goal is to relate second breakdown susceptibility to device characteristics. The diodes, fabricated by Rockwell International, allow the roles of device doping, diode width, n-region length, junction spikes, metallization spikes, and current crowding geometries to be explored by a stroboscopic method. Exciting pulses of 0.1, 1 and 10 microseconds duration are employed. At this date, the experiments have been set up, but the bulk of the experimentation remains to be done. A simplified model for describing the features of current filamentation that lead to second breakdown has been pursued in some depth, but this is also to be regarded as in an interim stage. Author

Descriptive Note:

Final rept. 15 Jul 77-31 Mar 78,

Supplementary Note:

DOI: 10.21236/ADA056276

Pages:

0068

Communities Of Interest:

Modernization Areas:

Contract Number:

DAAG29-77-G-0189

File Size:

23.11MB