Accession Number:

ADA056125

Title:

Ion Implantation of Wide Bandgap Semiconductors.

Personal Author(s):

Corporate Author:

HUGHES RESEARCH LABS MALIBU CALIF

Report Date:

1978-05-01

Abstract:

The principle dopant studied under this contract is Si n-type. Topics covered in this report include 1 encapsulation technology 2 transferability of Si implantation technology using plasma-deposition silicon nitride encapsulation and 3 problems associated with performing channeling into 110 crystal axes of a 100-oriented GaAs wafer. Author

Descriptive Note:

Semiannual technical rept. 1 Oct 77-31 Mar 78,

Pages:

0022

Descriptors:

Identifiers:

Subject Categories:

Communities Of Interest:

Modernization Areas:

Contract Number:

N00173-78-C-0070

File Size:

9.10MB

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