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Accession Number:
ADA010215
Title:
Evaluation of Gallium Nitride for Active Microwave Devices.
Corporate Author:
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
Report Date:
1974-04-01
Abstract:
The high 5 x 10 to the 18th power per cc electron density in as-grown GaN is shown to be due to native donors. Precipitation at grain boundaries and in the bulk does not influence these donors but limits the electric fields that can be applied. Compensation with Li can lower the carrier density, but at the expense of breakdown field. Crystal growth by CVD using NH3, although yielding single crystals as large as 1 x 2 x 1 cm, inherently leads to these low resistivities. Annealing or crystal growth under equilibrium very high N2 pressures is indicated.
Descriptive Note:
Annual rept. May 74-Apr 75,
Supplementary Note:
See also report dated May 74, AD-787 072.
Pages:
0015
Contract Number:
N00014-67-A-0269-0024
Contract Number 2:
N00014-75-C-0295
File Size:
0.00MB
