NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States
The commonly used n-type dopants, Si and Sn, were implanted into bulk -201 beta-Ga2O3 over a 2 order of magnitude dose range and annealed at temperatures from 1000-1150 degrees C. The original lattice parameters were restored by annealing at 1150 degrees C for the highest dose Si implants, while only partial recovery was observed in Sn implanted samples. The Sn implanted samples had overall lower lattice parameters compared to the Si implanted samples, indicating that Sn generates tensile strain in the Ga2O3 lattice. The rocking curve FWHM was observed to increase with the annealing process, indicating that the annealing process does not improve the crystal quality. Transmission electron microscopy showed removal of the end-of-range lattice damage after 1150 degrees C anneals of the heaviest implanted species, Sn. Cathodoluminescence at 5K showed recovery of intensity of the common UV band around 3.2 eV after annealing. Secondary Ion Mass Spectrometry profiling showed the presence of concentration-dependent diffusion of both Si and Sn, with values for diffusivity at 1150 degrees C of 9.5 x 10-13 cm.s-1 for Si and 1.7 x 10-13 cm.s-1 for Sn obtained by fitting through the FLOOPS simulation package.
Journal Article - Open Access
Ecs Journal of Solid State Science and Technology , 8, 7, 01 Jan 0001, 01 Jan 0001, This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.