Accession Number:

AD1098547

Title:

Control of Metal-Insulator Transition Temperature in VO2 Thin Films Grown on RuO2/TiO2 Templates by Strain Modification

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Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC WASHINGTON United States

Report Date:

2019-01-09

Abstract:

Ruthenium dioxide RuO2 is an ideal buffer layer for vanadium dioxide VO2 heterostructures due to its high electrical conductivity and matching crystal structure with metallic VO2. VO2 thin films were deposited on single crystal TiO2 001 substrates with RuO2 buffer layers via pulsed laser deposition. The metal-insulator transition temperature TMIT in VO2 films can be controlled by the epitaxial strain between the VO2 film and RuO2 buffer layer by adjusting the buffer layer thickness 10-50 nm. We observed a decrease in the T-MIT of VO2 films from 59 degrees C to 24 degrees C as the RuO2 thickness decreased from 50 nm to 10 nm. Additionally, we show that the RuO2 buffer layer can sustain an intermediate strain state in VO2 films up to 100 nm in thickness with a subsequently lower TMIT 30 degrees C. The 10 nm thick RuO2 buffer layer can reduce the TMIT in VO2 films by providing a pathway to relieve the strain through grain boundaries. C 2019 Authors.

Descriptive Note:

Journal Article - Embargoed Full-Text

Supplementary Note:

AIP Advances , 9, 01 Jan 0001, 01 Jan 0001,

Pages:

0007

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Distribution Statement:

Approved For Public Release;

File Size:

1.80MB

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