DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
AD1096690
Title:
High Performance Short Channel Field Effect Transistors Based on 2D Materials with Ohmic Contacts
Corporate Author:
Rutgers, The State University of New Jersey New Brunswick United States
Report Date:
2019-10-30
Abstract:
We have built on our discovery of achieving clean contacts using indium as the contact metal. In addition, we have begun to tune the metal deposition method achieve clean interfaces between refractory metals with high work functions and 2-D semiconductors to achieve p-type contacts. Our very recent results suggest it is possible to create clean vdW contacts via direct deposition of high work function metals on single TMD semiconductors. Our strategy is to use a very low deposition rates and substrate cooling down to 77K to eliminate damage and chemical reactions.
Descriptive Note:
Technical Report,15 Jun 2016,14 Jun 2019
Pages:
0009
Distribution Statement:
Approved For Public Release;
File Size:
1.85MB
