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Irradiation Effects on the Performance of III-V Based nBn Infrared Detectors

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Air Force Research Laboratory Space Vehicles Directorate Kirtland AFB United States

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Progress towards understanding the effects of irradiation on the performance of III-V-based nBn and other barrier-architecture infrared IR detectors over the last decade is reviewed and the mechanisms underlying the observed performance degradation are discussed. Detector performance degradation was quantified by observing changes in three performance parameters 1. lateral optical collection length, 2. quantum efficiency, and 3. dark-current density. Examining the theoretical equation for quantum efficiency damage factor suggested that increasing the minority-carrier mobility would enhance the radiation tolerance. Measurements of the radiation tolerance of a new nBn-related detector, the p-insert, where both holes and higher mobility electrons are photo-generated minority carriers, align with that prediction.

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Journal Article - Embargoed Full-Text

Supplementary Note:

Journal of Radiation Effects Research and Engineering , 38, 1, 01 Jan 0001, 01 Jan 0001,



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Approved For Public Release;

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