Accession Number:

AD1085923

Title:

Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy (Phase II: GaSb VS InSb QDs)

Personal Author(s):

Corporate Author:

CHULALONGKORN UNIVERSITY PATHUM WAN Thailand

Report Date:

2019-03-27

Abstract:

This second annual report summarizes the results and output resulting from research activities during the past 12 months of the project supported by AOARD co-funded by ONRG from September 2017 to September 2018 conducted at Chulalongkorn University in Thailand. Following the research work on InAs quantum dots QDs and quantum dot molecules QDMs grown by molecular beam epitaxy MBE, the research target is extended to GaSb QDs and InSb QDs on different substrates, i.e. GaAsGaSbInAs and Ge giving either type II or type III quantum nanostructures. This type II nanostructures would have a unique property of separated carrier confinement for novel nanoelectronic devices such as IR detectors, solar cells, memory devices, etc., and type III with tunneling effect for fast nanoelectronic devices. In phase II of the project, various physical, electrical and optical properties of these two nanostructures, i.e. GaSb and InSb, are intensively studied. The experiment is also extended to magnetic property of InSb nanostructure due to high-g factor.

Descriptive Note:

Technical Report,19 Sep 2016,18 Sep 2018

Pages:

0006

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Distribution Statement:

Approved For Public Release;

File Size:

0.86MB

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