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Accession Number:
AD1058786
Title:
Electrically Injected 280 nm AlGaN Nanowire Lasers on Silicon
Corporate Author:
McGill University Montreal, QC Canada
Report Date:
2017-02-28
Abstract:
To date, the performance of deep UV optoelectronic devices has been limited by the presence of extremely large densities of threading dislocations, strong polarization field and the related quantum-confined Stark effect, and extremely poor p-type conduction of AlN. We have recently demonstrated that the afore-described challenges for achieving high performance deep UV optoelectronic devices can be fundamentally addressed by the emerging AlGaN nanowire structures.
Descriptive Note:
Technical Report,01 Sep 2015,31 Aug 2019
Pages:
0025
Distribution Statement:
Approved For Public Release;
File Size:
1.29MB
