Molybdenum disulfide MoS2 is a 2-D material that shows promise for flexible electronics, low-power applications, and optoelectronics due to its atomic thickness, high strain limit, large IonIoff, and direct bandgap. We report on the electrical characterization of MoS2 transistors fabricated from US Army Research Laboratory-grown MoS2 and focus on how the MoS2 growth conditions affect the electrical performance. Metrics such as electron mobility, threshold voltage, hysteresis, and contact resistance are calculated for multiple devices on each growth condition. Measured devices had an electron mobility in the range of 115 cm2Vs. MoS2 grown with lower sulfur precursor purity had the lowest mobility and a negatively shifted threshold voltage. A longer MoS2 growth time led to devices with the highest measured mobility. Transferring the MoS2 to a new substrate and modifying the growth setup to a 2-boat process show potential for improving device performance and prompt further investigation.