CNT bridge fabrication results for SOI Batch 3A samples were shown in last report, except for the particularly promising sample TSoi-14N which was planned to be cleaned using a new microwave plasma ashing method prior to CNT growth. Although the MW plasma ashing wasnt successful in removing the remaining burntpopped photoresist on the sample, aligned CNT were obtained for the first time on this samples previously broken Bridge 3 Figure 1. However, Bridges 1 and 2 also collapsed before the CNT growth making CTsoi-14N unsuitable for electrical thermal characterization. Last MW stripping, lithography and CNT growth process parameters are available in the follow-up tables of Annex 1, Annex 1B, Annex 1, Annex 1D, and Annex 1, Annex 1G respectively for this sample. Photomicrographs and SEM micrographs of the CNT bridge are added for those last fabrication steps in Annex 2.