Accession Number:

AD0919977

Title:

High Quantum Efficiency Silicon Photocathodes and TSEM Layers.

Personal Author(s):

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE NY IMAGING DEVICES OPERATION

Report Date:

1973-04-01

Abstract:

The original objective of the program described in this report was to develop a high quantum efficiency silicon semi-transparent transmission, secondary electron multiplier TSEM in a simple image tube containing a photocathode, TSEM and a phosphor screen. Tube design and construction was performed at General Electric Imaging Devices Operation at Syracuse, while the applied research and advanced development of TSEM layers was done at the General Electric Research and Development Center. During the work on the program, it became apparent that the high dark current concomitant with the activation of silicon NEA surfaces, made it unsuitable for room temperature devices. The program scope was modified by shifting its emphasis to GaAs. Processes for polishing, thinning, handling and activating GaAs membranes were developed. The report is organized into two sections, one on work done with silicon TSEM layers, and the second on work done on GaAs TSEM layers. Author

Descriptive Note:

Final rept. Jun 71-Apr 73,

Pages:

0062

Communities Of Interest:

Contract Number:

DAAK02-71-C-0328

File Size:

0.00MB

Full text not available:

Request assistance