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Accession Number:
AD0918668
Title:
Gallium Arsenide Digital Integrated Circuits.
Corporate Author:
HEWLETT-PACKARD LABS PALO ALTO CA
Report Date:
1974-03-01
Abstract:
This report describes the results of Phase I of the Gallium Arsenide Digital Integrated Circuits program, which was intended to demonstrate the feasibility of fabricating digital circuits with GaAs metal-semiconductor field-effect transistor MESFET technology. Dc, RF and switching parameters of the GaAs MESFET were characterized, a large-signal nonlinear device model developed and verified with the characterization data and a MESFET logic gate fabricated. The logic gate exhibited a propagation delay of 60 ps plus 15 ps per output load and a useful bandwidth of 3-4 GHz. Based on these experimental results, it is predicted that practical medium-scale logic systems with 2-3 GHz clock rates will be possible. Progress in the development of a MESFET process with self-aligned gate is reported. Author
Descriptive Note:
Interim technical rept. 19 Mar-31 Dec 73,
Pages:
0061
Distribution Statement:
Approved for public release; Distribution unlimited.
Contract Number:
F33615-73-C-1242
File Size:
0.00MB
