GENERAL ELECTRIC CO SYRACUSE NY IMAGING DEVICES OPERATION
An InSb metal-insulator-semiconductor technology, operating in accordance with the charge-coupled principle, has been developed. The anodic oxides of InSb, used as an insulator, result in majority carrier trapping phenomena, which not only lead to an unstable MIS structure, but also inverts the InSb surface. However, by using an SiON dielectric material on the InSb surface, we have obtained excellent interface properties for both n- and p-type substrates. The C-V measurements on these InSb MIS structures, made with SiON, show that the characteristics follow a simple ideal MIS capacitor model. The frequency at which the minority carriers completely follow the measurement signal variation is in the 10 Hz range, an indication of low thermal generation. The thermal generation of minority carriers in these devices has been analyzed by measuring the conductance in the strong iversion region the dark current storage time was determined to be in the range of tenth second at 77 K. For surface charge-coupled type of operation in the IR region, however, the current generated by the background photon flux is normally much greater than the dark current and thus, determines the maximum storage time.