This report documents and describes the development efforts on fast sub-nanosecond prototype TPD Terminal Protection Device hardware using low inductance geometry TransZorb semiconductor devices as effective means of clamping EMP waveforms with minimal pulse energy leakage. This development study was accomplished through adapting insertion geometry of TransZorb devices to a minimum inductance configuration and parallel development of compatible terminal protection hardware to accommodate this geometry. The baseline used as a measure of progress in overcoming the voltage overshoot phenomenon was the initial Terminal Protection Device TPD-525. Threat levels up to and including 5kV were studied along with methods and techniques of improving frequency response for RF applications. Low inductance TransZorb insertion geometry can reduce pulse energy leakage caused by overshoot and offers a new approach for effective protection of components from the EMP threat.