Accession Number:

AD0904488

Title:

Microwave Devices in Silicon-on-Sapphire.

Corporate Author:

RCA LABS PRINCETON NJ

Report Date:

1972-10-01

Abstract:

The aim of this project was to explore the feasibility of monolithic integration at microwave frequencies with epitaxially grown silicon devices on sapphire substrates. Major emphasis was placed on developing the necessary processing techniques to fabricate a truly monolithic Impatt oscillator. In the course of the project, a PIN switch AM modulator with interdigital electrodes and air-bridge cross-over connections was employed as the experimental vehicle for technology development. A silicon-on-sapphire Impatt oscillator was fabricated and was successfully operated under pulsed conditions at 13.8 GHz, demonstrating the feasibility of monolithic integration at microwave frequencies. A novel quasi-monolithic approach which involved thermal compression bonding of high-quality silicon device structures on low-loss insulating substrates with high thermal conductivity is suggested for microwave integrated circuits. Author

Descriptive Note:

Final rept. 1 Jun 71-31 May 72,

Supplementary Note:

DDC form 55 not necessary for document request.

Pages:

0040

Communities Of Interest:

Contract Number:

F33615-71-C-1818

File Size:

0.00MB

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