GENERAL ELECTRIC CO SYRACUSE NY SEMICONDUCTOR PRODUCTS DEPT
The objective of the contract is to develop and optimize production capability for the manufacture of small signal solid encapsulated transistors capable of performing to military specifications. Both NPN device type D32D and PNP device type D34E transistors are being used as vehicles for this program. The silicon nitride process and equipment are being operated on a routine basis. The combination of silicon nitride, refractory metalization and glassivation is presently being reduced to a manufacturable process to be incorporated in the pilot line phase. The first lots of PNP devices are starting through the wafer fabrication process. The completed NPN structure with silicon nitride, refractory metalization and glassivation was subjected to the preliminary stress program. The results, which continue to show improved stability for these devices, are discussed. Author
Quarterly progress rept. no. 3, 1 Oct-31 Dec 70,
See also Quarterly progress rept. no. 2, AD-877 175.