Accession Number:

AD0852788

Title:

Compensation and Avalanche Techniques for Tree Hardening. Volume II. Nuclear Damage on Avalanche Transistors and Diodes

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Report Date:

1969-04-01

Abstract:

An analytical model to describe the behavior of a forward biased or reverse biased including avalanche breakdown diode in a transient X-ray environment is developed. The calculated results are compared with experimental results. The avalanche multiplication phenomenon is related to the physical parameters of the device. Equivalent circuits for the device under irradiation are developed. The basic theory of avalanche transistor operation is reviewed and the critical design factors for operation of an avalanche circuit in a radiation environment are discussed. The circuits were tested in the range from 1,000,000 Rsec to over 10 to the 10th power Rsec. Circuits were tested with and without different types of junction compensations. Avalanche diodes and transistors were also irradiated in a neutron environment. Some of the diodes and transistors were still functioning properly at doses of 8.6 10 to the 15th power nvt. An avalanche circuit was shown to be relatively insensitive to a neutron environment after exposure to neutron fluence in excess of 10 to the 15th power nsq cm. Author

Descriptive Note:

Technical rept. 15 Nov 1966-14 Sep 1967

Pages:

0215

Communities Of Interest:

Modernization Areas:

Distribution Statement:

Approved for public release; distribution is unlimited.

Contract Number:

F29601-67-C-0017

File Size:

12.03MB