DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
AD0852151
Title:
Properties and Application of SiC-Base Heaters for the Production of Glass-Metal Bonds,
Corporate Author:
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH
Report Date:
1969-03-06
Abstract:
The properties and use of silicon carbide heating elements for the production of the glass-to-metal bonds encountered in semiconductor manufacturing technology all-glass point-contact diodes, for example are discussed the advantages of SiC over metallic materials are briefly cited. The production stages involved in producing loop-shaped SiC heating elements from flat, plate-shaped basic material are described, the temperature function of the electrical resistance of the heater is analyzed, and other electrical characteristics of the element are reviewed. Author
Supplementary Note:
Edited trans. of Silikattechnik (East Germany) n1 p10-12 1968, by E. Novak.
Pages:
0011
File Size:
0.00MB