The properties and use of silicon carbide heating elements for the production of the glass-to-metal bonds encountered in semiconductor manufacturing technology all-glass point-contact diodes, for example are discussed the advantages of SiC over metallic materials are briefly cited. The production stages involved in producing loop-shaped SiC heating elements from flat, plate-shaped basic material are described, the temperature function of the electrical resistance of the heater is analyzed, and other electrical characteristics of the element are reviewed. Author
Edited trans. of Silikattechnik (East Germany) n1 p10-12 1968, by E. Novak.