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Accession Number:
AD0837602
Title:
IMPROVED MANUFACTURING METHODS OF INDIUM ANTIMONIDE IR DETECTOR ARRAYS.
Corporate Author:
AVCO CORP CINCINNATI OH ELECTRONICS DIV
Report Date:
1968-02-01
Abstract:
The overall purpose of the program was to improve existing processes and develop new manufacturing processes and techniques to reduce the cost and to increase the life expectancy of indium antimonide InSb single elements and arrays of photovoltaic detectors. The grown junction portion of the program was undertaken to improve fabrication and packaging techniques, to minimize leaks, to maximize outgassing absorption, to maximize detector ruggedness, to simplify bottle design and closure, and to determine in-process and final detector characteristics in relation to InSb grown junction basic parameters. The diffused junction detector portion of this program was undertaken to determine whether diffused batch fabricated mesa arrays could be produced as a replacement for the grown junction detector now used, and to refine critical processing steps required to manufacture these arrays. Three grown junction detectors and three diffused junction detectors were fabricated, tested and delivered as a part of the contract. Author
Descriptive Note:
Technical documentary rept.
Pages:
0162
Contract Number:
F33615-67-C-1005
File Size:
0.00MB
