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UNIAXIAL STRESS IN SILICON AND GERMANIUM. VOLUME I. SECTIONS 1 AND 2.
WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
A modification of the Haynes-Shockley technique has been developed to permit measurement of minority carrier mobility independent of sample geometry or lifetime. Electron mobility and piezoresistance was measured as a function of uniaxial stress up to 7 x 109 dynecm2. The mobility data was fitted to a theory incorporating the effects of stress on intervalley scattering. A current pinch effect was observed in intrinsic germanium and related to theory. A theory for pinch effect under illumination and with two lifetime regions was developed. Recently reported observations of the Gunn effect in silicon and germanium are reviewed relative to theoretical predictions made earlier by the present authors. Implications of the stress dependence of electron mobility on device design are discussed. Author
See also Volume 2, Sections 3-6, AD-835 765.