Three versions of a high-speed switching diode employing Ge-Si heterojunctions are described. Switching time for all three is independent of minority carrier lifetime and base thickness 150 microns. The diodes differ only specific resistance of the Si base D1, 12 ohm-cm D2, 1.2 ohm-cm in t0.12 ohm-cm. Parameters of the diodes for a bias voltage of -4 v are given.
Unedited rough draft,
Trans. of Przeglad Elektroniki (Poland) n10 p473-6 1965, by L. Marokus.