Accession Number:

AD0832926

Title:

GE-SI HETEROJUNCTIONS AS NANOSECOND SWITCHING DIODES (HETEROZLACZA GE-SI JAKO NANOSEKUNDOWE DIODY PRZELACZAJACE),

Personal Author(s):

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Report Date:

1967-08-18

Abstract:

Three versions of a high-speed switching diode employing Ge-Si heterojunctions are described. Switching time for all three is independent of minority carrier lifetime and base thickness 150 microns. The diodes differ only specific resistance of the Si base D1, 12 ohm-cm D2, 1.2 ohm-cm in t0.12 ohm-cm. Parameters of the diodes for a bias voltage of -4 v are given.

Descriptive Note:

Unedited rough draft,

Supplementary Note:

Trans. of Przeglad Elektroniki (Poland) n10 p473-6 1965, by L. Marokus.

Pages:

0010

Descriptors:

Identifiers:

Subject Categories:

File Size:

0.00MB

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