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Accession Number:
AD0832613
Title:
HANDBOOK FOR PREDICTING SEMICONDUCTOR DEVICE PERFORMANCE IN NEUTRON RADIATION.
Corporate Author:
BENDIX RESEARCH LABS SOUTHFIELD MI
Report Date:
1968-04-01
Abstract:
Procedures are presented for predicting transistor and diode electrical performance after permanent damage from neutron radiation. The prediction techniques are illustrated with examples of step-by-step calculations to facilitate use by circuit designers familiar with semiconductor device operation but not familiar with radiation damage effects in the devices. The handbook contains predictions of transistor current gain, saturation voltage, forward voltage, breakdown voltage, leakage current and switching time, forward voltage of power diodes, and transistor current gain in microelectronic configurations. Measurement of important physical device parameters needed in the prediction equations are described in detail. Also described is a procedure for measuring radiation test exposure in Radiation Damage Units RDU by using transistor Radiation Damage Monitors RDMs. Author
Descriptive Note:
Technical rept. Oct 65-Sep 67,
Pages:
0110
Contract Number:
AF 29(601)-7110
File Size:
0.00MB
