Accession Number:

AD0831638

Title:

CHARACTERIZATION OF AVALANCHE TRANSIT-TIME DIODES.

Personal Author(s):

Corporate Author:

CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Report Date:

1968-04-01

Abstract:

The microwave preformance of an avalanche transit-time diode as an oscillator and amplifier is examined. Small- and large-signal characteristics of avalanche silicon p-n junction diode have extensively and quantitatively been investigated. The experimental system and techniques for measuring the pulse-operated avalanche diode admittance are described. Results of diode admittance and diode Q factor are presented. The nonlinearity and broad frequency range of negative diode admittance are identified. The experimental results are in good agreement with theoretical analyses. The avalanche diode can be represented by an equivalent circuit consisting of a negative conductance in parallel with a capacitive susceptance. Both real and imaginary parts of the diode admittance are bias, frequency, and oscillatory amplitude dependent. These dependencies are described on the basis of experimental results. Author

Descriptive Note:

Interim rept.,

Pages:

0108

Descriptors:

Identifiers:

Subject Categories:

Contract Number:

F30602-68-C-0042

File Size:

0.00MB

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