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Accession Number:
AD0831634
Title:
TRANSISTOR, VHF, SILICON, POWER, LINEAR, 100-WATT PEP, 76-MHZ WITH 10-DB POWER GAIN.
Corporate Author:
RCA ELECTRONIC COMPONENTS SOMERVILLE NJ
Report Date:
1968-04-01
Abstract:
The design, fabrication and testing of a high-power transistor suitable for single-sideband operation at 76 MHz are discussed. This transistor, designated the TA7117, is of an overlay construction and incorporates a diffused, integrated-ballast resistor, integral emitter and base leads, and internally mounted, low-conductance diode for temperature compensation. The design of a high-power, two-tone test amplifier with bias control is detailed and the test results on the final transistors are given. The TA7117 transistor has demonstrated a capability of 100 watts PEP with 9.5 dB gain at -28 dB intermodulation distortion and an efficiency of 70 percent. The design of a high-power, linear amplifier using the TA7117 transistor is discussed. This amplifier is capable of WPEP with -46 dB IMD. The combination of this driver with a TA7117 final amplifier stage demonstrates a solid state linear amplifier capability of 1 milliwatt PEP to 100 watts PEP. Author
Descriptive Note:
Final rept. Sep 66-Feb 68,
Pages:
0104
Contract Number:
DA-28-043-AMC-02117(E)
File Size:
0.00MB
