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Accession Number:
AD0831289
Title:
TRANSISTOR, HF, SILICON, POWER, LINEAR (300 W PEP, 30 MHZ).
Corporate Author:
TRW SEMICONDUCTORS LAWNDALE CA
Report Date:
1968-03-01
Abstract:
Metal-oxide-metal transistors have been built which use titanium nickel gold metallization. A compatible all beryllia package suitable for flip-chip mounting has been designed and fabricated. Large area devices are being built on one chip by using a yield increasing discretionary wiring technique called cell selection. Lower thermal resistance on devices can be achieved by following the thermally symmetrical design concepts. Epitaxial emitter stabilizing resistors have been made. An integrated protection scheme has been devised which prolongs device life. Matching and stability considerations peculiar to the 300W device are analyzed. Author
Descriptive Note:
Interim rept. no. 1, 15 May-15 Nov 67,
Pages:
0082
Contract Number:
DAAB07-67-C-0421
File Size:
0.00MB
